Gate Voltage Controllable Non-Equilibrium and Non-Ohmic Behavior in Suspended Carbon Nanotubes

被引：28

作者：

Bushmaker, Adam W. ^{[1
]}

Deshpande, Vikram V. ^{[2
]}

Hsieh, Scott ^{[2
]}

Bockrath, Marc W. ^{[2
]}

Cronin, Stephen B. ^{[1
]}

机构：

[1] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA

[2] CALTECH, Dept Appl Phys, Pasadena, CA 91125 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 08期

基金：

美国国家科学基金会;

关键词：

ELECTRICAL-TRANSPORT; RAMAN-SCATTERING; HOT-PHONONS; TRANSISTORS; GAPS;

D O I：

10.1021/nl901042w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this work, we measure the electrical conductance and temperature of individual, suspended quasi-metallic single-walled carbon nanotubes under high voltage biases using Raman spectroscopy, while varying the doping conditions with an applied gate voltage. By applying a gate voltage, the high-bias conductance can be switched dramatically between linear (Ohmic) behavior and nonlinear behavior exhibiting negative differential conductance (NDC). Phonon populations are observed to be in thermal equilibrium under Ohmic conditions but switch to nonequilibrium under NDC conditions. A typical Landauer transport model assuming zero bandgap is found to be inadequate to describe the experimental data. A more detailed model is presented, which incorporates the doping dependence in order to fit this data.

引用

页码：2862 / 2866

页数：5

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