Intragap states in SmB6

被引：67

作者：

Sluchanko, NE

Glushkov, VV

Gorshunov, BP

Demishev, SV

Kondrin, MV

Pronin, AA

Volkov, AA

Savchenko, AK

Grüner, G

Bruynseraede, Y

Moshchalkov, VV

Kunii, S

机构：

[1] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia

[2] Univ Exeter, Dept Phys, Exeter EX4 4QL, Devon, England

[3] Univ Calif Los Angeles, Dept Phys, Los Angeles, CA 90024 USA

[4] Univ Calif Los Angeles, Ctr Solid State Sci, Los Angeles, CA 90024 USA

[5] Katholieke Univ Leuven, Vaste Stof Fys & Magnetisme Lab, B-3001 Louvain, Belgium

[6] Tohoku Univ, Dept Phys, Sendai, Miyagi 980, Japan

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.61.9906

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of wide-range measurements of the low-frequency, rf, and microwave conductivity in the typical mixed-valent narrow-gap semiconductor samarium hexaboride are presented. The established steplike anomaly of conductivity sigma(v) around 10 GHz is discussed in the framework of the exciton-polaron approach and coherent-state formation in SmB6 at helium temperatures. A combined analysis of the dc- and wide-range ac-transport characteristics and dielectric permittivity data at low temperatures is developed.

引用

页码：9906 / 9909

页数：4

共 16 条

[1]

Aeppli G., 1992, Comments Condens. Matter Phys., V16, P155

[2] MAGNETIC EXCITATION SPECTRUM OF MIXED-VALENCE SMB6 STUDIED BY NEUTRON-SCATTERING ON A SINGLE-CRYSTAL [J].

ALEKSEEV, PA ;

MIGNOT, JM ;

ROSSATMIGNOD, J ;

LAZUKOV, VN ;

SADIKOV, IP ;

KONOVALOVA, ES ;

PADERNO, YB .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (02) :289-305

[3] HIGH MAGNETIC-FIELDS AND THE CORRELATION GAP IN SMB6 [J].

COOLEY, JC ;

ARONSON, MC ;

LACERDA, A ;

FISK, Z ;

CANFIELD, PC ;

GUERTIN, RP .

PHYSICAL REVIEW B, 1995, 52 (10) :7322-7327

[4] MICROWAVE CAVITY PERTURBATION TECHNIQUE .2. EXPERIMENTAL SCHEME [J].

DONOVAN, S ;

KLEIN, O ;

DRESSEL, M ;

HOLCZER, K ;

GRUNER, G .

INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1993, 14 (12) :2459-2487

[5] Low-energy electrodynamics of SmB6 [J].

Gorshunov, B ;

Sluchanko, N ;

Volkov, A ;

Dressel, M ;

Knebel, G ;

Loidl, A ;

Kunii, S .

PHYSICAL REVIEW B, 1999, 59 (03) :1808-1814

[6]

Jeffries C. D., 1983, Electron-Hole Droplets in Semiconductors

[7] Studies of the correlated electron system SmB6 [J].

Kebede, A ;

Aronson, MC ;

Buford, CM ;

Canfield, PC ;

Cho, JH ;

Coles, BR ;

Cooley, JC ;

Coulter, JY ;

Fisk, Z ;

Goettee, JD ;

Hults, WL ;

Lacerda, A ;

McLendon, TD ;

Tiwari, P ;

Smith, JL .

PHYSICA B-CONDENSED MATTER, 1996, 223-24 (1-4) :256-259

[8] MAGNETIC EXCITATIONS IN INTERMEDIATE-VALENCE SEMICONDUCTORS WITH A SINGLET GROUND-STATE [J].

KIKOIN, KA ;

MISHCHENKO, AS .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1995, 7 (02) :307-313

[9] LOW-TEMPERATURE THERMAL-EXPANSION OF SMB6 - EVIDENCE FOR A SINGLE-ENERGY SCALE IN THE THERMODYNAMICS OF KONDO INSULATORS [J].

MANDRUS, D ;

SARRAO, JL ;

LACERDA, A ;

MIGLIORI, A ;

THOMPSON, JD ;

FISK, Z .

PHYSICAL REVIEW B, 1994, 49 (23) :16809-16812

[10] ELECTRON-STRAIN INTERACTION IN VALENCE FLUCTUATION COMPOUND-SMB6 [J].

NAKAMURA, S ;

GOTO, T ;

KASAYA, M ;

KUNII, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1991, 60 (12) :4311-4318

← 1 2 →