MAGNETIC EXCITATIONS IN INTERMEDIATE-VALENCE SEMICONDUCTORS WITH A SINGLET GROUND-STATE

被引:76
作者
KIKOIN, KA
MISHCHENKO, AS
机构
[1] Res. Centre, Kurchatov Inst., Moscow
关键词
D O I
10.1088/0953-8984/7/2/008
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
An explanation of the origin of inelastic peaks in magnetic neutron-scattering spectra of the mixed-valence semiconductor SmB6 is proposed. It is shown that the excitonic theory of the intermediate valence state not only gives the value of the peak frequency but also explains the unusual angular dependence of the intensity of inelastic magnetic scattering and describes the dispersion of magnetic excitations in good agreement with experiment.
引用
收藏
页码:307 / 313
页数:7
相关论文
共 25 条
[1]   MAGNETIC EXCITATIONS IN SMB6 SINGLE-CRYSTALS [J].
ALEKSEEV, PA ;
MIGNOT, JM ;
ROSSATMIGNOD, J ;
LAZUKOV, VN ;
SADIKOV, IP .
PHYSICA B-CONDENSED MATTER, 1993, 186-88 :384-386
[2]   LATTICE AND MAGNETIC EXCITATIONS IN SMB6 [J].
ALEKSEEV, PA .
PHYSICA B-CONDENSED MATTER, 1993, 186-88 :365-371
[3]   LATTICE-DYNAMICS OF INTERMEDIATE VALENCE SEMICONDUCTOR SMB6 [J].
ALEKSEEV, PA ;
IVANOV, AS ;
DORNER, B ;
SCHOBER, H ;
KIKOIN, KA ;
MISHCHENKO, AS ;
LAZUKOV, VN ;
KONOVALOVA, ES ;
PADERNO, YB ;
RUMYANTSEV, AY ;
SADIKOV, IP .
EUROPHYSICS LETTERS, 1989, 10 (05) :457-463
[4]   TEMPERATURE EFFECTS IN PHONON-DISPERSION OF SMB6 INTERMEDIATE VALENCE SEMICONDUCTOR [J].
ALEKSEEV, PA ;
IVANOV, AS ;
LAZUKOV, VN ;
SADIKOV, IP ;
SEVERING, A .
PHYSICA B, 1992, 180 :281-283
[5]  
ALEKSEEV PA, 1994, IN PRESS PHYSICA B
[6]  
ALEKSEEV PA, 1994, P INT C SCES93 SAN D
[7]   DYNAMICAL MAGNETIC RESPONSE OF MIXED-VALENT SMB6 - A THEORETICAL PREDICTION [J].
CZYCHOLL, G .
PHYSICAL REVIEW B, 1982, 25 (05) :3413-3415
[8]   SIMPLE MODEL FOR SEMICONDUCTOR-METAL TRANSITIONS - SMB6 AND TRANSITION-METAL OXIDES [J].
FALICOV, LM ;
KIMBALL, JC .
PHYSICAL REVIEW LETTERS, 1969, 22 (19) :997-&
[9]   CE3BI4PT3 AND HYBRIDIZATION GAP PHYSICS [J].
FISK, Z ;
CANFIELD, PC ;
THOMPSON, JD ;
HUNDLEY, MF .
JOURNAL OF ALLOYS AND COMPOUNDS, 1992, 181 :369-375
[10]  
KAPLAN TA, 1978, J APPL PHYS, V49, P2084