CE3BI4PT3 AND HYBRIDIZATION GAP PHYSICS

被引：35

作者：

FISK, Z

CANFIELD, PC

THOMPSON, JD

HUNDLEY, MF

机构：

[1] Los Alamos National Laboratory, Los Alamos

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1992年 / 181卷

关键词：

D O I：

10.1016/0925-8388(92)90333-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Basic thermodynamic and transport properties of Ce3Bi4Pt3 are reviewed. Although the susceptibility displays a canonical mixed valence temperature dependence, the electrical resistance, thermoelectric power and specific heat are those associated with a small gap semiconductor in which the gap is due to hybridization of the renormalized f and conduction electrons. In addition to this, a surprising correlation between the magnetic susceptibility and the thermal expansion as well as a simple theoretical framework within which hybridization-gapped systems can be viewed are presented.

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收藏

页码：369 / 375

页数：7

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