Growth of ZnSe single crystals with low dislocation density

High-quality ZnSe single crystals were grown by the chemical vapor transport method (CVT). Iodine was used as a transport agent. The concentration of iodine incorporated during crystal growth was about 150 ppm. The crystals contained no low-angle grain boundaries, but a relatively large concentration of Zn vacancies. The perfection of the crystal lattice was rather high, the peaks of the high-resolution X-ray diffraction lines had a linewidth (full-width half-maximum) of 17 arcsec. X-ray scans across (1 0 0) slices indicated a high degree of homogeneity of the single crystals. (C) 1999 Elsevier Science B.V. All rights reserved.