Solubility of nitrogen and phosphorus in 4H-SiC: A theoretical study

被引：51

作者：

Bockstedte, M ^{[1
]}

Mattausch, A ^{[1
]}

Pankratov, O ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Lehrstuhl Theoret Festkorperphys, D-91058 Erlangen, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 01期

关键词：

D O I：

10.1063/1.1769075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The n-type dopants phosphorus and nitrogen, and their complexes with intrinsic point defects are investigated in 4H-SiC by first-principles theory. The solubility and electrical activation of the dopants in thermodynamic equilibrium are calculated. For nitrogen, a saturation of the electrical activation above a certain critical concentration is found that is driven by a preferential incorporation of nitrogen into electrically passive nitrogen-vacancy complexes. This explains the observations of recent experiments. An almost complete phosphorus activation is found up to the solubility limit. We suggest that the low phosphorus doping achieved by sublimation growth is related to the growth kinetics. (C) 2004 American Institute of Physics.

引用

页码：58 / 60

页数：3

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