Effect of diffusion barrier in the thermally annealed exchange-biased IrMn-CoFe electrode in magnetic tunnel junctions

被引：6

作者：

Yoo, CS ^{[1
]}

Jeong, HD

Lee, JH

Yoon, CS

Kim, CK

Yuh, JH

Ando, Y

Kubota, H

Miyazaki, T

机构：

[1] Hanyang Univ, Dept Mat Sci & Engn, Seoul 133791, South Korea

[2] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[3] Tohoku Univ, Dept Appl Phys, Sendai, Miyagi 980, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2002年 / 38卷 / 05期

关键词：

diffusion processes; magnetic materials; tunneling magnetoresistance;

D O I：

10.1109/TMAG.2002.803168

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Exchange-biased electrodes IrMn/Ta(2 Angstrom)/CoFe/AlOx and IrMn/CoFe/Ta(2 Angstrom)-AlOx used in a magnetic tunnel junction were annealed at 300 degreesC to study the Mn diffusion characteristics. Auger electron spectroscopy and X-ray photoelectron spectroscopy analysis of the annealed electrodes show that the diffusion barrier effectively blocked the Mn migration, regardless of the barrier location. Also concluded from the study was that the Mn migration is largely enhanced by the preferential oxidation of Mn.

引用

页码：2715 / 2717

页数：3

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