Nonvolatile organic bistable devices fabricated utilizing Cu2O nanocrystals embedded in a polyimide layer
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作者:
Jung, Jae Hun
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机构:Hanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South Korea
Jung, Jae Hun
Kim, Jae-Ho
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机构:Hanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South Korea
Kim, Jae-Ho
Kim, Tae Whan
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Hanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South KoreaHanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South Korea
Kim, Tae Whan
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Song, Mun Seop
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机构:Hanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South Korea
Song, Mun Seop
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Kim, Young-Ho
Jin, Sungho
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机构:Hanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South Korea
Jin, Sungho
机构:
[1] Hanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South Korea
[2] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
[3] Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USA
The bistable effects of cuprous oxide (Cu2O) nanoparticles embedded in a polyimide (PI) matrix were investigated. Transmission electron microscopy images and selected area electron diffraction patterns showed that Cu2O nanocrystals were formed inside the PI layer. Current-voltage (I-V) measurements on Al/PI/nanocrystalline Cu2O/PI/Al structures at 300 K showed a nonvolatile electrical bistability behavior. A bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results. These results indicate that OBDs fabricated utilizing self-assembled inorganic Cu2O nanocrystals embedded in an organic PI layer hold promise for potential applications in nonvolatile flash memory devices. (c) 2006 American Institute of Physics.