Polariton dynamics and Bose-Einstein condensation in semiconductor microcavities

被引:159
作者
Porras, D [1 ]
Ciuti, C
Baumberg, JJ
Tejedor, C
机构
[1] Univ Autonoma Madrid, Dept Fis Teor Mat Condensada, E-28049 Madrid, Spain
[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[3] Univ Southampton, Dept Phys & Astron, Southampton SO17 1BJ, Hants, England
来源
PHYSICAL REVIEW B | 2002年 / 66卷 / 08期
关键词
D O I
10.1103/PhysRevB.66.085304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a theoretical model that allows us to describe the polariton dynamics in a semiconductor microcavity at large densities, for the case of nonresonant excitation. Exciton-polariton scattering from a thermalized exciton reservoir is identified as the main mechanism for relaxation into the lower polariton states. A maximum in the polariton distribution that shifts towards lower energies with increasing pump power or temperature is shown, in agreement with recent experiments. Above a critical pump power, macroscopic occupancies (5x10(4)) can be achieved in the lowest-energy polariton state. Our model predicts the possibility of Bose-Einstein condensation of polaritons, driven by exciton-polariton interaction, at densities well below the saturation density for CdTe microcavities.
引用
收藏
页码:853041 / 8530411
页数:11
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