Development of flip-chip bonding technology for (Cd,Zn)Te

被引：12

作者：

Fiederle, M ^{[1
]}

Braml, H

Fauler, A

Giersch, J

Ludwig, J

Jakobs, K

机构：

[1] Univ Freiburg, Freiburger Mat Forschungszentrum, D-79104 Freiburg, Germany

[2] Univ Erlangen Nurnberg, Inst Phys, Abt 4, D-91058 Erlangen, Germany

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 04期

关键词：

CdTe; CdZnTe; flip-chip bonding; pixel detector;

D O I：

10.1109/TNS.2004.832949

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

A flip-chip bonding technology has been developed for CdTe and (Cd,Zn)Te X-ray detectors. The aim of this paper is to choose a suitable chip interconnection technique for the fabrication of X-ray pixel detectors to fit the material requirements of detector grade CdTe and (Cd,Zn)Te. The proposed method is based on a flexible process, which permits the use of an eutectic PbSn alloy with a photoresist mask. A photosensitive polymer acts as a passivation layer and solder stop mask on CdTe or (Cd,Zn)Te. The proposed process provides the opportunity to do all process steps "in-house."

引用

页码：1799 / 1802

页数：4

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