Carbon nanotube ''T junctions'': Nanoscale metal-semiconductor-metal contact devices

被引：279

作者：

Menon, M

Srivastava, D

机构：

[1] UNIV KENTUCKY,CTR COMPUTAT SCI,LEXINGTON,KY 40506

[2] NASA,AMES RES CTR,NAS SYST DIV,MRJ,MOFFETT FIELD,CA 94035

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.79.4453

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Stable ''T junctions'' of single-walled carbon nanotubes forming one of the smallest prototypes of microscopic metal-semiconductor-metal contacts are proposed; The structures have been found to be local minima of the total energy on relaxation with a generalized tight-binding molecular dynamics; scheme. These quasi-2D junctions could be the building blocks of nanoscale tunnel junctions in a 2D network of nanoelectronic devices.

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页码：4453 / 4456

页数：4

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