Ultrafast phase transitions after femtosecond laser irradiation of indium phosphide

被引：15

作者：

Bonse, J ^{[1
]}

Wiggins, SM ^{[1
]}

Solis, J ^{[1
]}

机构：

[1] CSIC, Inst Opt, E-28006 Madrid, Spain

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 05期

关键词：

D O I：

10.1063/1.1776311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural transformation dynamics of single-crystalline indium phosphide irradiated with 150 fs laser pulses at 800 nm has been investigated by means of time-resolved reflectivity measurements covering a time window from 150 fs up to 500 ns. The results obtained show that for fluences above the threshold of 0.16 J/cm(2) thermal melting of the material occurs on the time scale of 1-2 ps, while ablation at higher fluences (>0.23 J/cm(2)) is preceeded by an ultrafast phase transition ("nonthermal melting") occurring within 400 fs after the arrival of the pulse to the surface. The evolution of the reflectivity on a longer time scale shows a resolidification time typically around 25 ns after which an amorphous layer several tens of nanometer thick is formed on the surface. (C) 2004 American Institute of Physics.

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页码：2628 / 2631

页数：4

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