High-Performance Organic Field-Effect Transistors

被引:643
作者
Braga, Daniele [1 ]
Horowitz, Gilles [1 ]
机构
[1] Univ Paris Diderot, ITODYS, F-75205 Paris 13, France
关键词
THIN-FILM TRANSISTORS; ELECTRONIC TRANSPORT; CHARGE-TRANSPORT; THRESHOLD VOLTAGE; GATE DIELECTRICS; SINGLE-CRYSTALS; CONTACT RESISTANCE; HOLE MOBILITY; INTERFACE; TEMPERATURE;
D O I
10.1002/adma.200802733
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
With the advent of devices based on single crystals, the performance of organic field-effect transistors has experienced a significant leap, with mobility now in excess of 10 cm(2) V-1 s(-1). The purpose of this review is to give an overview of the state-of-the-art of these high-performance organic transistors. The paper focuses on the problem of parameter extraction, limitations of the performance by the interfaces, which include the dielectric-semiconductor interface, and the injection and retrieval of charge carriers at the source and drain electrodes. High-performance devices also constitute tools of choice for investigating charge transport phenomena in organic materials. It is shown how the combination of field-effect measurements with other electrical characterizations helps in elucidating this still unresolved issue.
引用
收藏
页码:1473 / 1486
页数:14
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