Bulk electrical properties of rubrene single crystals: Measurements and analysis

被引：39

作者：

Braga, D. ^{[1
]}

Battaglini, N. ^{[1
]}

Yassar, A. ^{[1
]}

Horowitz, G. ^{[1
]}

Campione, M. ^{[2
]}

Sassella, A. ^{[2
]}

Borghesi, A. ^{[2
]}

机构：

[1] Univ Paris Diderot, CNRS, UMR 7086, ITODYS, F-75205 Paris 13, France

[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.77.115205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rubrene single crystals with well-developed (100) faces extending along the [010] direction were equipped with two planar gold electrodes deposited under low thermal load on the same crystal surface. The current-voltage curves measured on crystals with various thicknesses were analyzed by means of the space-charge-limited current model. In all cases, the curves present a clear trap-filled transition that allows extracting the trap-free mobility along the b axis. Working in a gap-type geometry and by comparing the mobility calculated from the Geurst two-dimensional and Mott-Gurney three-dimensional models, a clear 2D to 3D transition is established for a thickness that roughly corresponds to half the distance between the two electrodes. Further quantitative analysis of the data with a differential method leads to the conclusion that charge-transport properties at room temperature are affected by a discrete trap level pointing at 0.48 +/- 0.02 eV above the valence band.

引用

页数：7

共 26 条

[1] Patterning organic single-crystal transistor arrays [J].