Switching properties of V1-xTixO2 thin films deposited from alkoxides

被引：79

作者：

Beteille, F ^{[1
]}

Morineau, R ^{[1
]}

Livage, J ^{[1
]}

Nagano, M ^{[1
]}

机构：

[1] SAGA UNIV, FAC SCI & ENGN, DEPT APPL CHEM, SAGA 840, JAPAN

来源：

MATERIALS RESEARCH BULLETIN | 1997年 / 32卷 / 08期

关键词：

thin films; sol-gel chemistry; X-ray diffraction; electrical properties; optical properties;

D O I：

10.1016/S0025-5408(97)00084-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

TiO2-doped vanadium dioxide films have been deposited from vanadium oxo-alkoxide solutions. VO2 thin films of good optical quality are obtained after heating at 500 degrees C under a reducing atmosphere. These films exhibit highly reversible electrical and optical switching around 70 degrees C. A hysteresis phenomenon is observed, but V1-xTixO2 films do not exhibit the same behavior as other doped VO2 films. The width of the hysteresis curve decreases as soon as Ti is added to the VO2 film. Best switching characteristics are obtained with Ti approximate to 5%. Evidence of the coexistence of two phases around the transition temperature is presented. (C) 1997 Elsevier Science Ltd.

引用

页码：1109 / 1117

页数：9

共 26 条

[1] PHASE-TRANSITION IN REACTIVELY CO-SPUTTERED FILMS OF VO2-TIO2 [J].

BALBERG, I ;

ABELES, B ;

ARIE, Y .

THIN SOLID FILMS, 1974, 24 (02) :307-310

[2] EFFECTS OF OXYGEN IN ION-BEAM SPUTTER DEPOSITION OF VANADIUM-OXIDE [J].

CHAIN, EE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1987, 5 (04) :1836-1839

[3] 2 COMPONENTS OF CRYSTALLOGRAPHIC TRANSITION IN VO2 [J].

GOODENOUGH, JB .

JOURNAL OF SOLID STATE CHEMISTRY, 1971, 3 (04) :490-+

[4] STRUCTURES AND A 2-BAND MODEL FOR SYSTEM V1-XCRXO2 [J].

GOODENOUGH, JB ;

HONG, HYP .

PHYSICAL REVIEW B, 1973, 8 (04) :1323-1331

[5] RELAXATION PROCESS IN ELECTRON SPIN RESONANCE OF TI-DOPED VO2 [J].

GOTO, T ;

NISHIMUR.K ;

KABASHIM.S ;

KAWAKUBO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1971, 30 (06) :1654-&

[6] ELECTRON SPIN RESONANCE IN TI-DOPED VO2 [J].

GOTO, T ;

NISHIMURA, K ;

KABASHIMA, S ;

KAWAKUBO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1970, 28 (04) :993-+

[7] UNDOPED AND DOPED VO2 FILMS GROWN FROM VO(OC3H7)3 [J].

GREENBERG, CB .

THIN SOLID FILMS, 1983, 110 (01) :73-82

[8] Electrical switching in VO2 sol-gel films [J].

Guzman, G ;

Beteille, F ;

Morineau, R ;

Livage, J .

JOURNAL OF MATERIALS CHEMISTRY, 1996, 6 (03) :505-506

[9]

HORLIN T, 1976, J PHYS-PARIS, V37, P69

[10] VANADIUM-OXIDE FILMS FOR OPTICAL SWITCHING AND DETECTION [J].

JEROMINEK, H ;

PICARD, F ;

VINCENT, D .

OPTICAL ENGINEERING, 1993, 32 (09) :2092-2099

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