VANADIUM-OXIDE FILMS FOR OPTICAL SWITCHING AND DETECTION

被引：210

作者：

JEROMINEK, H ^{[1
]}

PICARD, F ^{[1
]}

VINCENT, D ^{[1
]}

机构：

[1] DEF RES ESTAB VALCARTIER,VALCARTIER G0A 1R0,PQ,CANADA

来源：

OPTICAL ENGINEERING | 1993年 / 32卷 / 09期

关键词：

VANADIUM OXIDE FILMS; SEMICONDUCTOR-METAL PHASE TRANSITION; OPTICAL SWITCHING; OPTICAL BOLOMETRIC DETECTORS;

D O I：

10.1117/12.143951

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Structural, electrical, and optical properties of the polycrystalline films of VO2, V2O5, and mixtures of these two oxides are presented. Resistivity change by a factor larger than 10(3) accompanying the semi-conductor-metal phase transition in the VO2 films is reported. A significant contrast in optical transmittance for the two phases of VO2 is observed. High temperature resistivity and optical transmittance of the V2O5 films are shown. Values of the temperature coefficient of resistance in some of the VO2 films in their semiconducting phase and in some of the V2O5 films are as high as 5.2 and 4% per degree Celsius, respectively. Phase switching properties of the VO2-V2O5 films are described. Applications of the fabricated films include optical switches and bolometric-type light detectors.

引用

页码：2092 / 2099

页数：8

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