Si nanowires synthesized with Cu catalyst

被引：62

作者：

Yao, Y. ^{[1
]}

Fan, S. ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Phys, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China

来源：

MATERIALS LETTERS | 2007年 / 61卷 / 01期

基金：

中国国家自然科学基金;

关键词：

nanomaterials; deposition; catalysts;

D O I：

10.1016/j.matlet.2006.04.045

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The metal copper which is a newly developed interconnecting material for integrated circuit (IC) has been used as the catalyst to catalyze the formation of the Si nanowires in high temperature tube furnace. The growth direction of the straight Si nanowires is < 111 > and the polyhedron eta"-Cu3Si alloy is on the tip of the Si nanowires. The synthesis temperature of the Si nanowires is 500 degrees C. Such a low temperature implies that the vapor-solid (VS) should be the growth method. The cheap Cu catalyst is favorable for the mass synthesis of Si nanowires. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：177 / 181

页数：5

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