Orientation-controlled growth of single-crystal silicon-nanowire arrays

被引：113

作者：

Ge, SP

Jiang, KL ^{[1
]}

Lu, XX

Chen, YF

Wang, RM

Fan, SS

机构：

[1] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China

[2] Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China

[3] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100087, Peoples R China

[4] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100087, Peoples R China

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 01期

关键词：

D O I：

10.1002/adma.200400474

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Silicon nanowire arrays on silicon substrates can be synthesized with precise orientation depending on the crystal orientation of the substrate using a vapor-liquid-solid epitaxial growth mechanism. The projections of the as-grown arrays form rectangular networks on silicon (100) substrates (see Figure), parallel straight lines on silicon (110) substrates, and triangular networks on silicon (111) substrates.

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页码：56 / +

页数：7

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