Silicon nanowires grown on iron-patterned silicon substrates

被引：35

作者：

Gu, Q ^{[1
]}

Dang, HY ^{[1
]}

Cao, J ^{[1
]}

Zhao, JH ^{[1
]}

Fan, SS ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 21期

关键词：

D O I：

10.1063/1.126565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports the synthesis of silicon nanowires on iron-patterned silicon substrates in a controlled fashion using a method involving thermal evaporation of pure silicon powder. The positions of these silicon nanowires were controlled by depositing iron in desired areas on the substrates. Transmission electron microscopy, high-resolution transmission electron microscopy, and scanning electron microscopy images indicate that the products are straight crystalline silicon nanowires with diameters of 10-60 nm. The formation mechanism of the nanowires is discussed. (C) 2000 American Institute of Physics. [S0003-6951(00)02521-3].

引用

页码：3020 / 3021

页数：2

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