Trap- Limited Exciton Diffusion in Organic Semiconductors

被引：137

作者：

Mikhnenko, Oleksandr V. ^{[1
,2
,3
]}

Kuik, Martijn ^{[1
,2
]}

Lin, Jason ^{[2
]}

van der Kaap, Niels ^{[1
]}

Thuc-Quyen Nguyen ^{[2
]}

Blom, Paul W. M. ^{[4
]}

机构：

[1] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

[2] Univ Calif Santa Barbara, Dept Chem & Biochem, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA

[3] Dutch Polymer Inst, NL-5600 AX Eindhoven, Netherlands

[4] Max Planck Inst Polymer Res, D-55128 Mainz, Germany

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 12期

基金：

美国国家科学基金会;

关键词：

organic semiconductors; polymers; small molecules; exciton diffusion; traps; ENERGY-TRANSFER; LENGTH; FILMS; DISSOCIATION; TRANSPORT; PCBM;

D O I：

10.1002/adma.201304162

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

From time-resolved luminescence measurements it is demonstrated that the background concentration of excitonquenching defects in a range of organic semiconductors is the same as their electron-trap concentration. This observation suggests that the exciton-quenching defects and the electron traps share the same origin. The typical exciton diffusion length of 5-8 nm for organic semiconductors is therefore governed by the distance between the universal electron traps. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1912 / 1917

页数：6

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