Gated-mode single-photon detection at 1550 nm by discharge pulse counting

被引：49

作者：

Yoshizawa, A ^{[1
]}

Kaji, R ^{[1
]}

Tsuchida, H ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 18期

关键词：

D O I：

10.1063/1.1738176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gated-mode single-photon detection using an avalanche photodiode is characterized by charge and discharge pulses, which are attributable to capacitive behavior. In this letter, the discharge pulse rather than the photon-induced avalanche pulse is counted in single-photon detection, in order to reduce after pulses. A demonstration adopts an indium-gallium-arsenide avalanche photodiode operating at 1550 nm. After-pulse probability per gate is evaluated at a repetition frequency of 5 MHz. (C) 2004 American Institute of Physics.

引用

页码：3606 / 3608

页数：3

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