Optically active hydrogen dimers in silicon

被引:3
作者
Hourahine, B
Jones, R
Safonov, AN
Öberg, S
Briddon, PR
Estreicher, SK
机构
[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England
[2] Univ Durham, Dept Phys, Durham DH1 3LE, England
[3] Univ Lulea, Dept Math, S-97187 Lulea, Sweden
[4] Univ Newcastle Upon Tyne, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[5] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA
关键词
hydrogen; silicon; multivacancy; photoluminescence;
D O I
10.1016/S0921-4526(99)00439-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
First-principles calculations are used to explore the structure and properties of several defects which are prominent luminescent centers in Si. The trigonal defects B-41 and B-1/71, which are known to contain two hydrogen atoms in equivalent and inequivalent sites, respectively, are attributed to a hexavacancy containing two H atoms in different configurations. It is suggested that the J luminescence centers arises from a stable hexavacancy without hydrogen atoms. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:176 / 179
页数:4
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