EPR STUDY OF DEFECTS IN NEUTRON-IRRADIATED SILICON - QUENCHED-IN ALIGNMENT UNDER (110)-UNIAXIAL STRESS

被引：123

作者：

LEE, YH ^{[1
]}

CORBETT, JW ^{[1
]}

机构：

[1] SUNY, DEPT PHYS, ALBANY, NY 12222 USA

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.9.4351

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4351 / 4361

页数：11

共 16 条

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BROWER, KL
VOOK, FL
BORDERS, JA
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 208 - &
[4] CORBETT JW, 1966, ELECTRON RADIATION D
[5] ELKIN EL, 1968, PHYS REV, V174, P88
[6] SPIN-1 CENTERS IN NEUTRON-IRRADIATED SILICON
JUNG, W
NEWELL, GS
[J]. PHYSICAL REVIEW, 1963, 132 (02): : 648 - &
[7] KAPLYANSKII AA, 1964, OPT SPEKTROSK, V16, P329
[8] Lee Y. H., 1972, RADIAT EFF, V15, P77
[9] EPR STUDIES IN NEUTRON-IRRADIATED SILICON - NEGATIVE CHARGE STATE OF A NONPLANAR 5-VACANCY CLUSTER (V5-)
LEE, YH
CORBETT, JW
[J]. PHYSICAL REVIEW B, 1973, 8 (06): : 2810 - 2826
[10] ELECTRON SPIN RESONANCE IN NEUTRON-IRRADIATED SILICON
NISENOFF, M
FAN, HY
[J]. PHYSICAL REVIEW, 1962, 128 (04): : 1605 - &