Polycrystalline Cr2+:ZnSe -: Laser material for middle infrared

被引：2

作者：

Herriot, S

Pocholle, JP

Berger, V

Pham-Thi, M

Lallier, E

Julien, F

Triboulet, R

Fusil, S

机构：

[1] Thales Res & Technol Fr, F-91404 Orsay, France

[2] Univ Paris 11, CNRS, Inst Elect Fondamentale, F-91405 Orsay, France

[3] CNRS, Lab Phys Solides & Recristallisat, Bellevue, France

来源：

JOURNAL DE PHYSIQUE IV | 2002年 / 12卷 / PR5期

关键词：

D O I：

10.1051/jp4:20020148

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：247 / 249

页数：3

共 10 条

[1] Transition metal-doped zinc chalcogenides: Spectroscopy and laser demonstration of a new class of gain media [J].

Deloach, LD ;

Page, RH ;

Wilke, GD ;

Payne, SA ;

Krupke, WF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (06) :885-895

[2]

HERRIOT S, CLEO EUROPE 2000

[3]

PAGE RH, OSA P SERIES, V10, P208

[4] Pulsed laser operation of diffusion-doped Cr2+:ZnSe [J].

Podlipensky, AV ;

Shcherbitsky, VG ;

Kuleshov, NV ;

Mikhailov, VP ;

Levchenko, VI ;

Yakimovich, VN ;

Postnova, LI ;

Konstantinov, VI .

OPTICS COMMUNICATIONS, 1999, 167 (1-6) :129-132

[5] Efficient laser operation and continuous-wave diode pumping of Cr2+:ZnSe single crystals [J].

Podlipensky, AV ;

Shcherbitsky, VG ;

Kuleshov, NV ;

Levchenko, VI ;

Yakimovich, VN ;

Mond, M ;

Heumann, E ;

Huber, G ;

Kretschmann, H ;

Kuck, S .

APPLIED PHYSICS B-LASERS AND OPTICS, 2001, 72 (02) :253-255

[6]

PODLIPENSKY AV, ASSL 2000

[7]

RABLAU CI, 1999, J ELECT MAT, V28

[8]

SOROKINA IT, ASSL 2000

[9]

TRIBOULET R, CNRS BELLEVUE

[10] Continuous-wave broadly tunable Cr2+:ZnSe laser [J].

Wagner, GJ ;

Carrig, TJ ;

Page, RH ;

Schaffers, KI ;

Ndap, JO ;

Ma, XY ;

Burger, A .

OPTICS LETTERS, 1999, 24 (01) :19-21

← 1 →