Effects of morphology on the electronic and transport properties of Sn-based clathrates

被引:33
作者
Mollnitz, L [1 ]
Blake, NP
Metiu, H
机构
[1] Univ Calif Santa Barbara, Dept Chem, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
关键词
D O I
10.1063/1.1485728
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Density-functional calculations are used to study the electronic structure and transport properties of the type-I clathrates, K8Sn46, and K(8)Sn(44)square(2), (square is a missing Sn atom), and the type-III clathrate K8Sn25. We show K(8)Sn(44)square(2) to be more stable than the defect-free K8Sn46, with K8Sn46 being metallic and K(8)Sn(44)square(2); semimetallic. K8Sn25 is a zintl-phase semiconductor with a band gap of 0.5 eV. It has flatter bands than the type-I clathrates and can be expected to exhibit a smaller electrical conductivity but much larger Seebeck coefficient than the almost zintl K(8)Sn(44)square(2). The figure of merit of the type-III clathrate is an order of magnitude larger than its type-I counterparts. This would make a suitably doped K8Sn25 at least as good a thermoelectric as the best Ge-based type-I clathrates, and potentially better, depending on the momentum relaxation time for carriers in this material. (C) 2002 American Institute of Physics.
引用
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页码:1302 / 1312
页数:11
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