Passivation and etching of fine-grained polycrystalline silicon films by hydrogen treatment

被引：28

作者：

Slaoui, A. ^{[1
]}

Pihan, E. ^{[1
]}

Ka, I. ^{[1
]}

Mbow, N. A. ^{[1
]}

Roques, S. ^{[1
]}

Koebel, J. M. ^{[1
]}

机构：

[1] CNRS, InESS, F-67037 Strasbourg, France

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2006年 / 90卷 / 14期

关键词：

polycrystalline silicon; hydrogenation; plasma;

D O I：

10.1016/j.solmat.2006.02.004

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Here we investigated the effects of hydrogen treatment on highly defected polycrystalline silicon solar cells in terms of defects passivation and surface etching. The poly-Si films were formed by high-temperature chemical vapour deposition. The hydrogen treatment was carried out through deposition of a-SiNx:H layer followed by a thermal treatment or by direct hydrogen plasma. The deposition of silicon nitride layers on polysilicon cells led to a slight increase in the open-cirCUit voltage without damage to the surface. In contrast, after plasma hydrogenation. the results revealed an etching process of the emitter simultaneously with an important increase of the measured open-circuit voltage by a factor 2, reaching 420 mV. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2087 / 2098

页数：12

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