HYDROGEN PASSIVATION OF GRAIN-BOUNDARY DEFECTS IN POLYCRYSTALLINE SILICON THIN-FILMS

被引：127

作者：

NICKEL, NH

JOHNSON, NM

JACKSON, WB

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 25期

关键词：

D O I：

10.1063/1.109101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependence of defect passivation in undoped polycrystalline silicon on hydrogenation conditions (i.e., time and temperature) was examined. At long hydrogenation times the spin density N(S) saturates. The saturation value of N(S) depends strongly on the hydrogenation temperature. The lowest residual spin density was obtained at 350-degrees-C. Model calculations of the time and temperature dependence of the defect passivation suggest that the amount of hydrogen necessary for defect passivation exceeds the density of grain boundary defects by a factor that is significantly larger than unity and which depends on the hydrogenation temperature.

引用

页码：3285 / 3287

页数：3

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