HYDROGEN DIFFUSION IN POLYCRYSTALLINE SILICON THIN-FILMS

被引:74
作者
JACKSON, WB
JOHNSON, NM
TSAI, CC
WU, IW
CHIANG, A
SMITH, D
机构
[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304
关键词
D O I
10.1063/1.108446
中图分类号
O59 [应用物理学];
学科分类号
摘要
Grain boundaries in undoped polycrystalline silicon (poly-Si) thin films are shown to act as efficient hydrogen traps rather than as paths of enhanced diffusion. A comparison of hydrogen diffusion in poly-Si and undoped single-crystal silicon (c-Si) demonstrates that the diffusion in poly-Si is significantly suppressed compared to c-Si. These results have significant implications for hydrogenation of poly-Si thin-film transistors.
引用
收藏
页码:1670 / 1672
页数:3
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