ELECTRON-SPIN-RESONANCE STUDY OF HYDROGENATION EFFECTS IN POLYCRYSTALLINE SILICON

被引:26
作者
BALLUTAUD, D [1 ]
AUCOUTURIER, M [1 ]
BABONNEAU, F [1 ]
机构
[1] UNIV PIERRE & MARIE CURIE,SPECTROCHIM SOLIDE LAB 302,F-75231 PARIS 05,FRANCE
关键词
D O I
10.1063/1.97247
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1620 / 1622
页数:3
相关论文
共 20 条
[1]  
BAGHDADI A, 1984, 2ND MRS EUR C POL AM, P373
[2]  
BALLUTAUD D, 1986, UNPUB SURFACE SC DEC
[3]   SI-29 HYPERFINE MEASUREMENTS IN A-SI-H [J].
BIEGELSEN, DK ;
STUTZMANN, M .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :703-706
[4]   SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J].
BROWER, KL .
APPLIED PHYSICS LETTERS, 1983, 43 (12) :1111-1113
[5]  
BUGAI AA, 1985, SOV PHYS SEMICOND+, V19, P159
[6]   INFLUENCE OF HYDROGEN IMPLANTATION ON THE RESISTIVITY OF POLYCRYSTALLINE SILICON [J].
CHEN, DL ;
GREVE, DW ;
GUZMAN, AM .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1408-1410
[7]   SPIN-DEPENDENT HOLE DIFFUSION IN A-SI-H [J].
DERSCH, H ;
SCHWEITZER, L .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 50 (03) :397-404
[8]   HYDROGEN PASSIVATION OF DISLOCATIONS IN SILICON [J].
DUBE, C ;
HANOKA, JI .
APPLIED PHYSICS LETTERS, 1984, 45 (10) :1135-1137
[9]   KINETIC MODELING FOR HYDROGEN PASSIVATION OF POLYCRYSTALLINE SILICON [J].
GINLEY, DS ;
HELLMER, RP .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :871-879
[10]  
GOLTZENE A, 1984, 2ND MRS EUR C POL AM, P115