SPIN-DEPENDENT HOLE DIFFUSION IN A-SI-H

被引：17

作者：

DERSCH, H

SCHWEITZER, L

机构：

[1] UNIV MARBURG,FACHBEREICH PHYS,D-3550 MARBURG,FED REP GER

[2] PHYS TECH BUNDESANSTALT,D-3300 BRUNSWICK,FED REP GER

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1984年 / 50卷 / 03期

关键词：

D O I：

10.1080/13642818408238864

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：397 / 404

页数：8

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[1] RECOMBINATION PROCESSES IN A-SI-H - SPIN-DEPENDENT PHOTOCONDUCTIVITY
DERSCH, H
SCHWEITZER, L
STUKE, J
[J]. PHYSICAL REVIEW B, 1983, 28 (08): : 4678 - 4684
[2] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON
DERSCH, H
STUKE, J
BEICHLER, J
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01): : 265 - 274
[3] CONDUCTIVITY CHANGE DUE TO ELECTRON-SPIN RESONANCE IN AMORPHOUS SI-AU SYSTEM
KISHIMOTO, N
MORIGAKI, K
MURAKAMI, K
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1981, 50 (06) : 1970 - 1977
[4] CORRELATION-EFFECTS AND THE DENSITY OF STATES IN AMORPHOUS-SILICON
SCHWEITZER, L
GRUNEWALD, M
DERSCH, H
[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (02) : 355 - 358
[5] RECOMBINATION IN ALPHA-SI-H - SPIN-DEPENDENT EFFECTS
STREET, RA
[J]. PHYSICAL REVIEW B, 1982, 26 (07): : 3588 - 3604
[6] LUMINESCENCE AND ELECTRON-SPIN-RESONANCE STUDIES OF DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
STREET, RA
BIEGELSEN, DK
[J]. SOLID STATE COMMUNICATIONS, 1980, 33 (12) : 1159 - 1162
[7] SPIN-DEPENDENT PHOTOCONDUCTIVITY IN UNDOPED A-SI-H
STREET, RA
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (03): : 273 - 278
[8] INFRARED QUENCHING OF PHOTOCONDUCTIVITY AND THE STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON ALLOYS
VANIER, PE
GRIFFITH, RW
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3098 - 3102