LUMINESCENCE AND ELECTRON-SPIN-RESONANCE STUDIES OF DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

[1] DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (25) : 1755 - 1758

[2] PHOTO-LUMINESCENCE AND LIFETIME STUDIES ON PLASMA DISCHARGE A-SI [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) : 373 - 391

[3] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &

[4] DEFECT STATES IN AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04): : 325 - 334

[5] NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 889 - 891

[6] DOPING AND ANNEALING EFFECTS ON ESR IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (01) : 13 - 16

[7] OPTICALLY INDUCED ELECTRON-SPIN RESONANCE IN DOPED AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1977, 22 (02) : 133 - 137

[8] STRUCTURE OF AMORPHOUS (GE,SI)1-XYX ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (17) : 1151 - 1154

[9] REHM W, 1976, 13TH P INT C PHYS SE, P525

[10] Spear W. E., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P1

[1] DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (25) : 1755 - 1758

[2] PHOTO-LUMINESCENCE AND LIFETIME STUDIES ON PLASMA DISCHARGE A-SI [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) : 373 - 391

[3] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &

[4] DEFECT STATES IN AMORPHOUS SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04): : 325 - 334

[5] NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 889 - 891

[6] DOPING AND ANNEALING EFFECTS ON ESR IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1979, 29 (01) : 13 - 16

[7] OPTICALLY INDUCED ELECTRON-SPIN RESONANCE IN DOPED AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1977, 22 (02) : 133 - 137

[8] STRUCTURE OF AMORPHOUS (GE,SI)1-XYX ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (17) : 1151 - 1154

[9] REHM W, 1976, 13TH P INT C PHYS SE, P525

[10] Spear W. E., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P1