INFRARED QUENCHING OF PHOTOCONDUCTIVITY AND THE STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON ALLOYS

被引：32

作者：

VANIER, PE

GRIFFITH, RW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.331058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3098 / 3102

页数：5

共 14 条

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