MODIFICATIONS IN OPTOELECTRONIC BEHAVIOR OF PLASMA-DEPOSITED AMORPHOUS-SEMICONDUCTOR ALLOYS VIA IMPURITY INCORPORATION

被引：61

作者：

GRIFFITH, RW

KAMPAS, FJ

VANIER, PE

HIRSCH, MD

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(80)90626-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：391 / 396

页数：6

共 15 条

[1] ANALYSIS OF PHOTOCONDUCTIVITY IN AMORPHOUS CHALCOGENIDES
ARNOLDUS.TC
BUBE, RH
HOLMBERG, SA
FAGEN, EA
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1798 - &
[2] ENHANCED PHOTOCONDUCTIVITY IN NITROGEN-DOPED AMORPHOUS SILICON PREPARED BY DC SPUTTERING
BAIXERAS, J
MENCARAGLIA, D
ANDRO, P
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03): : 403 - 407
[3] BRODIE DE, 1977, AMORPHOUS LIQUID SEM, P472
[4] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[5] ANALYSIS OF PHOTOCONDUCTIVITY APPLIED TO CADMIUM-SULFIDE-TYPE PHOTOCONDUCTORS
BUBE, RH
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 234 - 248
[6] ENGEMANN D, 1976, STRUCTURE EXCITATION, P37
[7] NASHASHIBI TS, 1977, AMORPHOUS LIQUID SEM, P392
[8] PHOTOCONDUCTIVITY IN MANGANESE-DOPED GERMANIUM
NEWMAN, R
WOODBURY, HH
TYLER, WW
[J]. PHYSICAL REVIEW, 1956, 102 (03): : 613 - 617
[9] NEW DEVELOPMENT IN STUDY OF AMORPHOUS SILICON HYDROGEN ALLOYS - STORY OF O
PAESLER, MA
ANDERSON, DA
FREEMAN, EC
MODDEL, G
PAUL, W
[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (21) : 1492 - 1495
[10] PANKOVE JI, 1979, B AM PHYS SOC, V24, P435