ENHANCED PHOTOCONDUCTIVITY IN NITROGEN-DOPED AMORPHOUS SILICON PREPARED BY DC SPUTTERING

被引：36

作者：

BAIXERAS, J ^{[1
]}

MENCARAGLIA, D ^{[1
]}

ANDRO, P ^{[1
]}

机构：

[1] UNIV PARIS 11, F-92260 FONTENAY AUX ROSE, FRANCE

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1978年 / 37卷 / 03期

关键词：

D O I：

10.1080/01418637808227680

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous silicon, prepared by d.c. sputtering in a hydrogen/argon mixture, has been obtained with a low dark conductivity (10-10 Ω1 cm-1) at room temperature and a high photoconductivity. Moreover, a high-level doping has been achieved by the introduction of nitrogen in the plasma during the sputtering process. This doping displaces the Fermi level to within 0.1 eV of the conduction band edge and enhances the photoconductivity by several orders of magnitude. © 1978 Taylor & Francis Ltd.

引用

页码：403 / 407

页数：5

共 13 条

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON [J].