HYDROGEN PASSIVATION OF DISLOCATIONS IN SILICON

被引：57

作者：

DUBE, C

HANOKA, JI

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 10期

关键词：

D O I：

10.1063/1.95045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1135 / 1137

页数：3

共 17 条

[1] HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON [J].

BENTON, JL ;

DOHERTY, CJ ;

FERRIS, SD ;

FLAMM, DL ;

KIMERLING, LC ;

LEAMY, HJ .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :670-671

[2] HYDROGEN DIFFUSION ALONG PASSIVATED GRAIN-BOUNDARIES IN SILICON RIBBON [J].

DUBE, C ;

HANOKA, JI ;

SANDSTROM, DB .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :425-427

[3]

GINLEY DS, 1984, UNPUB 17TH IEEE PHOT

[4] HYDROGEN PASSIVATION OF DEFECTS IN SILICON RIBBON GROWN BY THE EDGE-DEFINED FILM-FED GROWTH-PROCESS [J].

HANOKA, JI ;

SEAGER, CH ;

SHARP, DJ ;

PANITZ, JKG .

APPLIED PHYSICS LETTERS, 1983, 42 (07) :618-620

[5] MATERIAL PROCESSING WITH BROAD-BEAM ION SOURCES [J].

HARPER, JME ;

CUOMO, JJ ;

KAUFMAN, HR .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1983, 13 :413-439

[6] DEUTERIUM PASSIVATION OF GRAIN-BOUNDARY DANGLING BONDS IN SILICON THIN-FILMS [J].

JOHNSON, NM ;

BIEGELSEN, DK ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :882-884

[7] HYDROGEN PASSIVATION OF LASER-INDUCED ACCEPTOR DEFECTS IN P-TYPE SILICON [J].

LAWSON, EM ;

PEARTON, SJ .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02) :K155-K158

[8]

Noguchi K., 1982, Japanese Journal of Applied Physics, Supplement, V21, P39

[9] PALLADIUM-RELATED AND PLATINUM-RELATED LEVELS IN SILICON - EFFECT OF A HYDROGEN PLASMA [J].

PEARTON, SJ ;

HALLER, EE .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3613-3615

[10] HYDROGEN PASSIVATION OF DEFECTS IN DEFORMED SILICON [J].

POHORYLES, B .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 67 (01) :K75-K80

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