HYDROGEN DIFFUSION ALONG PASSIVATED GRAIN-BOUNDARIES IN SILICON RIBBON

被引：42

作者：

DUBE, C

HANOKA, JI

SANDSTROM, DB

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 04期

关键词：

D O I：

10.1063/1.94797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：425 / 427

页数：3

相关论文

共 9 条

[1] CHARACTERIZATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SOLAR-CELLS USING A COMPUTERIZED ELECTRON-BEAM INDUCED CURRENT SYSTEM
DONOLATO, C
BELL, RO
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1983, 54 (08) : 1005 - 1008
[2] THEORY OF BEAM INDUCED CURRENT CHARACTERIZATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SOLAR-CELLS
DONOLATO, C
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1314 - 1322
[3] HYDROGEN PASSIVATION OF DEFECTS IN SILICON RIBBON GROWN BY THE EDGE-DEFINED FILM-FED GROWTH-PROCESS
HANOKA, JI
SEAGER, CH
SHARP, DJ
PANITZ, JKG
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 618 - 620
[4] ELECTRON-BEAM-INDUCED CURRENTS IN SEMICONDUCTORS
HANOKA, JI
BELL, RO
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1981, 11 : 353 - 380
[5] MATERIAL PROCESSING WITH BROAD-BEAM ION SOURCES
HARPER, JME
CUOMO, JJ
KAUFMAN, HR
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1983, 13 : 413 - 439
[6] DEUTERIUM PASSIVATION OF GRAIN-BOUNDARY DANGLING BONDS IN SILICON THIN-FILMS
JOHNSON, NM
BIEGELSEN, DK
MOYER, MD
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 882 - 884
[7] STUDIES OF THE HYDROGEN PASSIVATION OF SILICON GRAIN-BOUNDARIES
SEAGER, CH
GINLEY, DS
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1050 - 1055
[8] Taylor A. S., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P589
[9] WALD FV, 1981, CRYSTALS GROWTH PROP, V5, P147