THE EXODIFFUSION OF HYDROGEN IN DISLOCATED CRYSTALLINE SILICON

被引：22

作者：

KVEDER, VV ^{[1
]}

LABUSCH, R ^{[1
]}

OSSIPYAN, YA ^{[1
]}

机构：

[1] ACAD SCI USSR,INST SOLID STATE PHYS,CHERNOGOLOVKA 142432,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 84卷 / 01期

关键词：

D O I：

10.1002/pssa.2210840118

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：149 / 156

页数：8

共 15 条

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OSIPYAN, YA ;

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[7] ELECTRON-STATES ASSOCIATED WITH PARTIAL DISLOCATIONS IN SILICON [J].

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[10] HYDROGEN PASSIVATION OF DEFECTS IN DEFORMED SILICON [J].

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