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Spin-glass-like behavior of Ge: Mn
被引:70
作者:
Jaeger, C.
Bihler, C.
Vallaitis, T.
Goennenwein, S. T. B.
Opel, M.
Gross, R.
Brandt, M. S.
机构:
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[2] Bayer Akad Wissensch, Walther Meissner Inst, D-85748 Garching, Germany
来源:
PHYSICAL REVIEW B
|
2006年
/
74卷
/
04期
关键词:
D O I:
10.1103/PhysRevB.74.045330
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We present a detailed study of the magnetic properties of low-temperature molecular-beam-epitaxy-grown Ge:Mn dilute magnetic semiconductor films. We find strong indications for a frozen state of Ge1-xMnx, with freezing temperatures of T-f=12 K and T-f=15 K for samples with x=0.04 and x=0.2, respectively, determined from the difference between field-cooled and zero-field-cooled magnetization. For Ge0.96Mn0.04, ac susceptibility measurements show a peak around T-f, with the peak position T-f ' shifting as a function of the driving frequency f by Delta T-f '/[T-f ' Delta log f]approximate to 0.06, whereas for sample Ge0.8Mn0.2 a more complicated behavior is observed. Furthermore, both samples exhibit relaxation effects of the magnetization after switching the magnitude of the external magnetic field below T-f which are in qualitative agreement with the field- and zero-field-cooled magnetization measurements. These findings consistently show that Ge:Mn exhibits a frozen magnetic state at low temperatures and that it is not a conventional ferromagnet.
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