Structural analysis of GaN layers with columnar structures grown by hydrogen-assisted ECR-MBE

被引：10

作者：

Araki, T ^{[1
]}

Chiba, Y ^{[1
]}

Nanishi, Y ^{[1
]}

机构：

[1] Ritsumeikan Univ, Dept Photon, Shiga 5258577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 210卷 / 1-3期

关键词：

GaN; ECR-MBE; TEM; columnar domain; stacking fault; hydrogen;

D O I：

10.1016/S0022-0248(99)00671-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN layers with columnar structures were grown by electron-cyclotron resonance (ECR) plasma-excited molecular beam epitaxy (MBE) with hydrogen-nitrogen-mixed gas plasma. The structure and defect characteristics of the GaN layers were investigated using scanning electron microscopy and transmission electron microscopy. The columnar structures showed a crystallographic hexagonal shape with a density of 2.8 x 10(9)/cm(2) and a size of 50-200 nm. The surface of the columns had hexagonal pyramids with (1 0 (1) over bar 1) facets. A high density of stacking faults parallel to (0 0 0 1) plane was observed in the columnar domains. The relationship between the formation of stacking faults and the effect of hydrogen on ECR-MBE GaN growth was discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：162 / 166

页数：5

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