Epitaxial PbZr.52Ti.48O3 films on SrTiO3/(001)Si substrates deposited by sol-gel method

被引：27

作者：

Talin, AA ^{[1
]}

Smith, SM ^{[1
]}

Voight, S ^{[1
]}

Finder, J ^{[1
]}

Eisenbeiser, K ^{[1
]}

Penunuri, D ^{[1
]}

Yu, Z ^{[1
]}

Fejes, P ^{[1
]}

Eschrich, T ^{[1
]}

Curless, J ^{[1
]}

Convey, D ^{[1
]}

Hooper, A ^{[1
]}

机构：

[1] Motorola Labs, Tempe, AZ 85284 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 06期

关键词：

D O I：

10.1063/1.1498006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the sol-gel deposition and characterization of high-quality, epitaxial films of PbZr.52Ti.48O3 (PZT) on (001)Si substrates, with a thickness range of 400 Angstrom to 1 mum. The epitaxial growth of PZT on (001)Si is achieved using a thin template layer of SrTiO3, grown by molecular-beam epitaxy. The sol-gel PZT films have a typical surface roughness of 5 Angstrom and exhibit well defined reflective high-energy electron diffraction patterns characteristic of smooth, epitaxial films. Using high-resolution transmission electron microscopy and double-crystal x-ray diffraction, we find that the PZT films are oriented with the c axis normal to the (001)Si plane and with the a axis lying along <110>Si direction. Finally, we measure the electromechanical coupling coefficients and the surface acoustic wave velocities for our films as a function of thickness and compare our experimental data to previously published theoretical values for this system. (C) 2002 American Institute of Physics.

引用

页码：1062 / 1064

页数：3

共 13 条

[1] LINEAR ELECTROOPTIC RESPONSE IN SOL-GEL PZT PLANAR WAVE-GUIDES [J].