SOLID-PHASE EPITAXIAL-GROWTH OF SOL-GEL DERIVED PB(ZR,TI)O-3 THIN-FILMS ON SRTIO3 AND MGO

被引：69

作者：

NASHIMOTO, K ^{[1
]}

FORK, DK ^{[1
]}

ANDERSON, GB ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.113433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were crystallized on SrTiO3 (100) and MgO (100) substrates by a sol-gel process using nonhydrolyzed metal methoxyethoxide precursors, spin coating, and rapid thermal annealing. Solid phase epitaxial growth of PZT on SrTiO3 was observed directly from the amorphous phase even at 425°C. The PZT had a single (001) orientation and rocking curve full width at half maximum (FWHM) less than 0.1°. High-temperature annealing of MgO substrates improved orientation of PZT thin films. Epitaxial crystallization of PZT with a single (001) orientation on the annealed MgO was observed at temperature above 550°C after the formation of the pyrochlore phase.© 1995 American Institute of Physics.

引用

页码：822 / 824

页数：3

共 16 条

[1] IMPROVED SURFACE CRYSTALLINITY OF MGO CRYSTAL SUBSTRATE THROUGH ANNEALING IN OXYGEN ATMOSPHERE [J].