EPITAXIAL-GROWTH OF PB(ZR,TI)O3 FILMS ON MGAL2O4 BY PULSED LASER DEPOSITION

被引：14

作者：

LING, SH ^{[1
]}

TANG, YS ^{[1
]}

AU, WS ^{[1
]}

WONG, HK ^{[1
]}

机构：

[1] CHINESE UNIV HONG KONG,DEPT MAT SCI & ENGN,SHA TIN,HONG KONG

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 15期

关键词：

D O I：

10.1063/1.109598

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stoichiometric MgAl2O4 spinel single crystals were used as the substrates for deposition of lead zirconate titanate (PZT) thin films because of their excellent lattice matching. Epitaxial growth of (001) PZT films with a perovskite structure was achieved by means of the pulsed laser deposition technique but there exists a stringent restriction on the substrate temperature and oxygen pressure. PZT films could also be grown epitaxially on spinel substrates with an odd cut surface indicating that other growth directions can be obtained if the substrates are prepared with suitable orientation.

引用

页码：1757 / 1759

页数：3

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