GROWTH OF EPITAXIAL PB(ZR,TI)O3 FILMS BY PULSED LASER DEPOSITION

被引:59
作者
LEE, J [1 ]
SAFARI, A [1 ]
PFEFFER, RL [1 ]
机构
[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703
关键词
D O I
10.1063/1.108438
中图分类号
O59 [应用物理学];
学科分类号
摘要
Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary have been grown on MgO (100) and Y1Ba2Cu3Ox (YBCO) coated MgO substrates. Substrate temperature and oxygen pressure were varied to achieve ferroelectric films with a perovskite structure. Films grown on MgO had the perovskite structure with an epitaxial relationship with the MgO substrate. On the other hand, films grown on the YBCO/MgO substrate had an oriented structure to the surface normal with a misorientation in the plane parallel to the surface. The measured dielectric constant and loss tangent at 1 kHz were 670 and 0.05, respectively. The remnant polarization and coercive field were 42 muC/CM2 and 53 kV/cm. A large internal bias field ( 12 kV/cm) was observed in the as-deposited state of the undoped PZT films.
引用
收藏
页码:1643 / 1645
页数:3
相关论文
共 18 条