Elastic modulus of single-crystal GaN nanowires

被引：33

作者：

Ni, Hai

Li, Xiaodong ^{[1
]}

Cheng, Guosheng

Klie, Robert

机构：

[1] Univ S Carolina, Dept Mech Engn, Columbia, SC 29208 USA

[2] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

[3] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[4] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 2006年 / 21卷 / 11期

关键词：

D O I：

10.1557/JMR.2006.0350

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The deformation behavior of single-crystal GaN nanowires was studied by directly performing three-point bending tests on each individual nanowire in an atomic force microscope. The elastic modulus calculated from the load-displacement response of the nanowires was 43.9 +/- 2.2 GPa. Single-crystal GaN nanowires investigated in this study were synthesized by chemical vapor deposition techniques based on the vapor-liquid-solid growth mechanism and had a diameter range from 60 to 110 nm. Crystalline GaN nanowires did not show obvious plastic deformation in bending and usually failed in a brittle manner.

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收藏

页码：2882 / 2887

页数：6

相关论文

共 41 条

[1] TEM investigations on ZnO nanobelts synthesized via a vapor phase growth [J].

Chen, YF ;

Wang, RM ;

Zhang, HZ ;

Sun, XC ;

Zhang, ZS ;

Xing, YJ ;

Yu, DP .

MICRON, 2004, 35 (06) :481-487

[2] Large-scale synthesis of single crystalline gallium nitride nanowires [J].

Cheng, GS ;

Zhang, LD ;

Zhu, Y ;

Fei, GT ;

Li, L ;

Mo, CM ;

Mao, YQ .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2455-2457

[3] Current rectification in a single GaN nanowire with a well-defined p-n junction [J].

Cheng, GS ;

Kolmakov, A ;

Zhang, YX ;

Moskovits, M ;

Munden, R ;

Reed, MA ;

Wang, GM ;

Moses, D ;

Zhang, JP .

APPLIED PHYSICS LETTERS, 2003, 83 (08) :1578-1580

[4] Mechanics of hydrogenated amorphous carbon deposits from electron-beam-induced deposition of a paraffin precursor [J].

Ding, W ;

Dikin, DA ;

Chen, X ;

Piner, RD ;

Ruoff, RS ;

Zussman, E ;

Wang, X ;

Li, X .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (01)

[5] Room-temperature blue gallium nitride laser diode [J].

Fasol, G .

SCIENCE, 1996, 272 (5269) :1751-1752

[6] Crystallographic orientation-aligned ZnO nanorods grown by a tin catalyst [J].

Gao, PX ;

Ding, Y ;

Wang, IL .

NANO LETTERS, 2003, 3 (09) :1315-1320

[7] GaN nanowire lasers with low lasing thresholds [J].

Gradecak, S ;

Qian, F ;

Li, Y ;

Park, HG ;

Lieber, CM .

APPLIED PHYSICS LETTERS, 2005, 87 (17) :1-3

[8] A simple large-scale synthesis of very long aligned silica nanowires [J].

Hu, JQ ;

Jiang, Y ;

Meng, XM ;

Lee, CS ;

Lee, ST .

CHEMICAL PHYSICS LETTERS, 2003, 367 (3-4) :339-343

[9] Directed assembly of one-dimensional nanostructures into functional networks [J].

Huang, Y ;

Duan, XF ;

Wei, QQ ;

Lieber, CM .

SCIENCE, 2001, 291 (5504) :630-633

[10] Logic gates and computation from assembled nanowire building blocks [J].

Huang, Y ;

Duan, XF ;

Cui, Y ;

Lauhon, LJ ;

Kim, KH ;

Lieber, CM .

SCIENCE, 2001, 294 (5545) :1313-1317

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