Operation of electroluminescent porous silicon diodes as surface-emitting cold cathodes

被引：5

作者：

Sheng, X ^{[1
]}

Ozaki, T ^{[1
]}

Koyama, H ^{[1
]}

Koshida, N ^{[1
]}

Yoshikawa, T ^{[1
]}

Yamaguchi, M ^{[1
]}

Ogasawara, K ^{[1
]}

机构：

[1] PIONEER ELECT CO LTD, CORP RES & DEV LAB, TSURUGA, SAITAMA 35002, JAPAN

来源：

THIN SOLID FILMS | 1997年 / 297卷 / 1-2期

关键词：

electroluminescence; porous silicon; cold cathodes; ELECTRON-EMISSION;

D O I：

10.1016/S0040-6090(96)09475-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cold electron emission properties of porous silicon (PS) electroluminescent diodes have been investigated as a function of the top metal electrode thickness, surface work function, and the thickness of PS layer. It is shown that the best thicknesses for Pt and Au electrodes are 50 - 80 Angstrom. The emission is enhanced by introducing an Al-Mg alloy electrode with a relatively low work function. Although the emission efficiency and the threshold voltage show definite dependencies on the thickness of PS layer, the Fowler-Nordheim plots show a linear behavior in every case. The maximum emission current density and efficiency obtained in this study are 10 mu A cm(-2) and 10(-3), respectively.

引用

页码：314 / 316

页数：3

共 4 条

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[3]

SHENG X, 1995, P INT S ADV LUM MAT, P87

[4] Reducing electron energy dispersion of nonformed metal-insulator-metal electron emitters using the near-threshold drive method [J].

Suzuki, M ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06) :2201-2205

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