Screened-exchange determination of the optical properties of large gap insulators:: CaF2

被引:14
作者
Kim, M [1 ]
Zhao, YJ
Freeman, AJ
Mannstadt, W
机构
[1] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
[2] Schott Glas, Mainz, Germany
关键词
D O I
10.1063/1.1737073
中图分类号
O59 [应用物理学];
学科分类号
摘要
Optical measurements have provided an extremely difficult challenge to existing electronic band structure calculations. Although CaF2, an important large gap insulator, has been intensively investigated, no parameter-free first-principles calculations have been done due to the well-known failure of the local density approximation (LDA) in treating excited states. Here, we present results of fully first-principles calculations of the electronic structure and optical properties of CaF2 with the self-consistent screened-exchange LDA method implemented in the highly precise full-potential linearized augmented plane wave approach. The calculated optical energy gap, 12.05 eV, is in excellent agreement with experiment (12.0+/-0.1 eV) and so greatly improves the LDA result (7.23 eV). The optical properties, including the imaginary part of the dielectric function and the reflectance determined ab initio with full matrix elements and no parameters, are found to be in good agreement with experiment. (C) 2004 American Institute of Physics.
引用
收藏
页码:3579 / 3581
页数:3
相关论文
共 13 条
[1]   ELECTRONIC BAND-STRUCTURE OF FLUORITE [J].
ALBERT, JP ;
JOUANIN, C ;
GOUT, C .
PHYSICAL REVIEW B, 1977, 16 (02) :925-933
[2]   Screened-exchange LDA methods for films and superlattices with applications to the Si(100)2X1 surface and InAs/InSb superlattices [J].
Asahi, R ;
Mannstadt, W ;
Freeman, AJ .
PHYSICAL REVIEW B, 2000, 62 (04) :2552-2561
[3]   Optical properties and electronic structures of semiconductors with screened-exchange LDA [J].
Asahi, R ;
Mannstadt, W ;
Freeman, AJ .
PHYSICAL REVIEW B, 1999, 59 (11) :7486-7492
[4]   DIELECTRIC FUNCTION OF CAF2 BETWEEN 10 AND 35 EV [J].
BARTH, J ;
JOHNSON, RL ;
CARDONA, M ;
FUCHS, D ;
BRADSHAW, AM .
PHYSICAL REVIEW B, 1990, 41 (05) :3291-3294
[5]   GOOD SEMICONDUCTOR BAND-GAPS WITH A MODIFIED LOCAL-DENSITY APPROXIMATION [J].
BYLANDER, DM ;
KLEINMAN, L .
PHYSICAL REVIEW B, 1990, 41 (11) :7868-7871
[6]  
GAN F, 1991, PHYS REV B, V45, P8248
[7]   Computational band-structure engineering of III-V semiconductor alloys [J].
Geller, CB ;
Wolf, W ;
Picozzi, S ;
Continenza, A ;
Asahi, R ;
Mannstadt, W ;
Freeman, AJ ;
Wimmer, E .
APPLIED PHYSICS LETTERS, 2001, 79 (03) :368-370
[8]   ELECTRONIC ENERGY-BAND STRUCTURE OF THE CALCIUM-FLUORIDE CRYSTAL [J].
HEATON, RA ;
LIN, CC .
PHYSICAL REVIEW B, 1980, 22 (08) :3629-3638
[9]   FAR ULTRAVIOLET REFLECTANCE SPECTRA AND ELECTRONIC-STRUCTURE OF IONIC-CRYSTALS [J].
RUBLOFF, GW .
PHYSICAL REVIEW B, 1972, 5 (02) :662-&
[10]   Many-body effects on bandwidths in ionic, noble gas, and molecular solids [J].
Shirley, EL .
PHYSICAL REVIEW B, 1998, 58 (15) :9579-9583