Preparation of Cu2ZnSnS4 thin films by sulfurizing electroplated precursors

被引：126

作者：

Araki, Hideaki ^{[1
]}

Kubo, Yuki ^{[1
]}

Mikaduki, Aya ^{[1
]}

Jimbo, Kazuo ^{[1
]}

Maw, Win Shwe ^{[1
]}

Katagiri, Hironori ^{[1
]}

Yamazaki, Makoto ^{[1
]}

Oishi, Koichiro ^{[1
]}

Takeuchi, Akiko ^{[1
]}

机构：

[1] Nagaoka Natl Coll Technol, Niigata 9408532, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 6-7期

关键词：

Cu2ZnSnS4 (CZTS); Electroplated precursors; Sulfurization; Thin film solar cells; OPTICAL-PROPERTIES; SOLAR-CELLS;

D O I：

10.1016/j.solmat.2008.11.045

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cu2ZnSnS4 (CZTS) thin films were prepared by sulfurizing precursors deposited by electroplating. The precursors (Cu/Sn/Zn stacked layers) were deposited by electroplating sequentially onto Mo-coated glass substrates. Aqueous solutions containing copper sulfate for Cu plating, tin sulfate for Sn plating and zinc sulfate for Zn plating were used as the electrolytes. The precursors were sulfurized by annealing with sulfur at temperatures of 300, 400, 500 and 600 degrees C in an N-2 gas atmosphere. The X-ray diffraction peaks attributable to CZTS were detected in thin films sulfurized at temperatures above 400 degrees C. A photovoltaic cell using a CZTS thin film produced by sulfurizing an electroplated Sn-rich precursor at 600 degrees C exhibited an open-circuit voltage of 262 mV, a short-circuit current of 9.85 mA/cm(2) and an efficiency of 0.98%. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：996 / 999

页数：4

共 9 条

[1] ELECTRICAL AND OPTICAL-PROPERTIES OF STANNITE-TYPE QUATERNARY SEMICONDUCTOR THIN-FILMS [J].