Preparation of Cu2ZnSnS4 thin films by hybrid sputtering

被引：323

作者：

Tanaka, T ^{[1
]}

Nagatomo, T

Kawasaki, D

Nishio, M

Guo, QX

Wakahara, A

Yoshida, A

Ogawa, H

机构：

[1] Saga Univ, Synchrotron Light Applicat Ctr, Saga 8408502, Japan

[2] Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan

[3] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2005年 / 66卷 / 11期

关键词：

semiconductors; thin films; optical properties;

D O I：

10.1016/j.jpcs.2005.09.037

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In order to fabricate Cu2ZnSnS4 thin films, hybrid sputtering system with two sputter sources and two effusion cells is used. The Cu2ZnSnS4 films are fabricated by the sequential deposition of metal elements and annealing in S flux, varying the substrate temperature. The Cu2ZnSnS4 films with stoichiometric composition are obtained at the substrate temperature up to 400 degrees C, whereas the film composition becomes quite Zn-pool at the substrate temperature above 450 degrees C. The Cu2ZnSnS4 film shows p-type conductivity, and the optical absorption coefficient and the band gap of the Cu2ZnSnS4 film prepared in this experiment are suitable for fabricating a thin film solar cell. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1978 / 1981

页数：4

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