Mechanism of Carrier Mobility Degradation Induced by Crystallization of HfO2 Gate Dielectrics

被引：12

作者：

Ando, Takashi ^{[1
]}

Shimura, Takayoshi ^{[1
]}

Watanabe, Heiji ^{[1
]}

Hirano, Tomoyuki ^{[2
]}

Yoshida, Shinichi ^{[2
]}

Tai, Kaori ^{[2
]}

Yamaguchi, Shinpei ^{[2
]}

Iwamoto, Hayato ^{[2
]}

Kadomura, Shingo ^{[2
]}

Toyoda, Satoshi ^{[3
]}

Kumigashira, Hiroshi ^{[3
]}

Oshima, Masaharu ^{[3
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Mat & Life Sci, Suita, Osaka 5650871, Japan

[2] Sony Corp, Semicond Business Grp, Semicond Technol Dev Div, Kanagawa 2430014, Japan

[3] Univ Tokyo, Grad Sch Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 07期

关键词：

ELECTRON-MOBILITY; REMOTE PHONON;

D O I：

10.1143/APEX.2.071402

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have experimentally shown that crystallization of HfO2 and the subsequent formation of fixed charges localized at the HfO2/SiO2 interface bring about a degradation of electron mobility. Systematic analyses of valence-band photoemission and transmission electron microscopy indicate that the oxygen transfer from the HfO2 layer to the Si substrate is promoted upon the crystallization of HfO2 and the fixed charges are generated during the process. These findings highlight the importance of controlling the crystallinity of HfO2 for realizing high performance metal gate high-K field-effect transistors. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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