Structural rearrangements during the initial growth stages of organic thin films of F16CuPc on SiO2

被引:47
作者
de Oteyza, Dimas G.
Barrena, Esther [1 ]
Sellner, Stefan
Osso, J. Oriol
Dosch, Helmut
机构
[1] Max Planck Inst Met Res, D-70569 Stuttgart, Germany
[2] Univ Stuttgart, Inst Theoret & Angew Phys, D-70550 Stuttgart, Germany
[3] CSIC, Inst Ciencia Mat Barcelona, Bellaterra 08193, Spain
关键词
D O I
10.1021/jp061889u
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present an experimental study on the first stages of the thin film growth of the organic molecule F16CuPc (hexadecafluoro-copper-phthalocyanines) on SiO2. By means of in situ X-ray reflectivity, in situ grazing incidence X-ray diffraction (GIXD), and ex situ atomic force microscopy (AFM), we provide a detailed picture of the film growth mode and its structural evolution at the nanometer scale. We discovered the formation of a low-density layer of molecular aggregates with heights between 5 and 10 angstrom at the interface with the SiO2 and show that, on top of this interfacial layer, the nucleation and two-dimensional growth of elongated islands of upright standing molecules take place. Structural changes are observed, pointing to significant relaxations of the lattice parameters within the first layers of standing molecules.
引用
收藏
页码:16618 / 16623
页数:6
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